The modes of operation can be described in terms of the applied voltages (this description applies to NPN transistors; polarities are reversed for PNP transistors): Forward-active (or simply, active): The base?emitter junction is forward biased and the base?collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, ?F, in forward-active mode. Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector. This mode corresponds to a logical "on", or a closed switch. Cutoff: In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current, which corresponds to a logical "off", or an open switch.